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Volume 1 (2011)
Structural, Electrical and Optical properties of ATO thin films fabricated by Dip Coating Method
Article 10, Volume 1, Number 2, Page 123-128 (6), July 2011 XML PDF (407 K)
Document Type: Original Research Paper
Authors
1Talaat M. Hammad ; 2Naser K. Hejazy
1Physics Department, Faculty of Science, Al-Azhar University, P.O. Box 1277, Gaza, Gaza Strip, Palestine
2Al-Quds Open University, Gaza Branch, Department of Education,Gaza Strip, Gaza, Palestine
Abstract
Antimony-doped tin oxide ATO thin films were prepared by dip coating method. The effect of antimony doping on the structural, electrical and optical properties of tin oxide thin films were investigated. Tin(II) chloride dehydrate (SnCl2•4H2O) and antimony(III) chloride (SbCl3) were used as a host and a dopant precursor. X-ray diffraction analysis showed that the non-doped SnO2 thin film had a preferred (211) orientation, but as the Sb-doping concentration increased, a preferred (200) orientation was observed. The lowest resistivity (about 5.4 ×10-3 Ω.cm) was obtained for the 2 at.% Sb-doped films. Antimony-doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance of ATO films was observed to increase to 96% at 2 at. % Sb-doping, and then it was decreased for a higher level of antimony doping.
Keywords
Electrical properties; Optical Properties; ATO; Thin Films; Dip Coating
Main Subjects
Nano-Materials
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